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Proceedings Paper

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers
Author(s): Shuxia Li; N. Garry Tarr; Winnie N. Ye
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Paper Abstract

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Paper Details

Date Published: 22 February 2018
PDF: 10 pages
Proc. SPIE 10537, Silicon Photonics XIII, 105371M (22 February 2018); doi: 10.1117/12.2290395
Show Author Affiliations
Shuxia Li, Carleton Univ. (Canada)
N. Garry Tarr, Carleton Univ. (Canada)
Winnie N. Ye, Carleton Univ. (Canada)


Published in SPIE Proceedings Vol. 10537:
Silicon Photonics XIII
Graham T. Reed; Andrew P. Knights, Editor(s)

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