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Proceedings Paper

Demonstration of AlGaN-delta-GaN QW by plasma-assisted molecular beam epitaxy for 260-nm ultraviolet light-emitting diodes
Author(s): Cheng Liu; Kevin Lee; S.M. Islam; Huili (Grace) Xing; Debdeep Jena; Jing Zhang
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Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, ; doi: 10.1117/12.2290366
Show Author Affiliations
Cheng Liu, Rochester Institute of Technology (United States)
Kevin Lee, Cornell Univ. (United States)
S.M. Islam, Cornell Univ. (United States)
Huili (Grace) Xing, Cornell Univ. (United States)
Debdeep Jena, Cornell Univ. (United States)
Jing Zhang, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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