Share Email Print

Proceedings Paper

Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser
Author(s): M. Ali Alloush; Rouven H. Pilny; Carsten Brenner; Andreas Klehr; Andrea Knigge; Günther Tränkle; Martin R. Hofmann
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Semiconductor lasers are promising sources for generating ultrashort pulses. They are directly electrically pumped, allow for a compact design, and therefore they are cost-effective alternatives to established solid-state systems. Additionally, their emission wavelength depends on the bandgap which can be tuned by changing the semiconductor materials. Theoretically, the obtained pulse width can be few tens of femtoseconds. However, the generated pulses are typically in the range of several hundred femtoseconds only. Recently, it was shown that by implementing a spatial light modulator (SLM) for phase and amplitude control inside the resonator the optical bandwidth can be optimized. Consequently, by using an external pulse compressor shorter pulses can be obtained. We present a Fourier-Transform-External-Cavity setup which utilizes an ultrafast edge-emitting diode laser. The used InGaAsP diode is 1 mm long and emits at a center wavelength of 850 nm. We investigate the best conditions for passive, active and hybrid mode-locking operation using the method of self-adaptive pulse shaping. For passive mode-locking, the bandwidth is increased from 2.34 nm to 7.2 nm and ultrashort pulses with a pulse width of 216 fs are achieved after external pulse compression. For active and hybrid mode-locking, we also increased the bandwidth. It is increased from 0.26 nm to 5.06 nm for active mode-locking and from 3.21 nm to 8.7 nm for hybrid mode-locking. As the pulse width is strongly correlated with the bandwidth of the laser, we expect further reduction in the pulse duration by increasing the bandwidth.

Paper Details

Date Published: 19 February 2018
PDF: 7 pages
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 105530N (19 February 2018); doi: 10.1117/12.2290086
Show Author Affiliations
M. Ali Alloush, Ruhr-Univ. Bochum (Germany)
Rouven H. Pilny, Ruhr-Univ. Bochum (Germany)
Carsten Brenner, Ruhr-Univ. Bochum (Germany)
Andreas Klehr, Ferdinand-Braun-Institut (Germany)
Andrea Knigge, Ferdinand-Braun-Institut (Germany)
Günther Tränkle, Ferdinand-Braun-Institut (Germany)
Martin R. Hofmann, Ruhr-Univ. Bochum (Germany)

Published in SPIE Proceedings Vol. 10553:
Novel In-Plane Semiconductor Lasers XVII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

© SPIE. Terms of Use
Back to Top