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Room-temperature photoluminescence spectrum from β-FeSi2 films
Author(s): Kensuke Akiyama; Yoshihisa Matsumoto; Hiroshi Funakubo
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Paper Abstract

Luminescent epitaxial β-FeSi2 films were grown on the Ag-layer pre-coated Si(111) substrates by metal-organic chemical vapor deposition method. These epitaxial β-FeSi2 films had (101)/(110)-preferred orientation and were constructed with a triple-domain structure. The photoluminescence intensity of this (101)/(110)-orientated epitaxial β-FeSi2 films grown at 700°C was larger than that of β-FeSi2 films at the other deposition temperature, indicating the decreasing of the density of non-radiative recombination centers in β-FeSi2 film. The thermal equilibrium Si vacancy is considered to act as the non-radiative recombination centers in β-FeSi2.

Paper Details

Date Published: 14 February 2018
PDF: 6 pages
Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 105541N (14 February 2018); doi: 10.1117/12.2289984
Show Author Affiliations
Kensuke Akiyama, Kanagawa Institute of Industrial Science and Technology (Japan)
Tokyo Institute of Technology (Japan)
Yoshihisa Matsumoto, Kanagawa Institute of Industrial Science and Technology (Japan)
Hiroshi Funakubo, Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 10554:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII
Jong Kyu Kim; Michael R. Krames; Martin Strassburg; Li-Wei Tu, Editor(s)

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