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Metalized monolithic high-contrast grating as a mirror for GaN-based VCSELs
Author(s): Robert P. Sarzała; Adam K. Sokół; Łukasz Piskorski; Maciej Kuc; Patrycja Śpiewak; Magdalena Maciniak; Marcin Gębski; Michał Wasiak; Tomasz Czyszanowski
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Paper Abstract

In this paper, we present a novel design of a nitride-based VCSEL emitting at 414 nm and perform numerical analysis of optical, electrical and thermal phenomena. The bottom mirror of the laser is a Al(In)N/GaN DBR (Distributed Bragg Reflector), whereas the top mirror is realized as a semiconductor-metal subwavelength-grating, etched in GaN with silver stripes deposited between the stripes of the semiconductor grating. In this monolithic structure simulations show a uniform active-region current density on the level of 5.5 kA/cm2 for the apertures as large as 10 μm. In the case of a broader apertures, e.g. 40 μm, we showed that, assuming a homogeneous current injection at the level of 5.5 kA/cm2 , the temperature inside the laser should not exceed 360 K, which gives promise to improve thermal management by uniformisation of the current injection.

Paper Details

Date Published: 23 February 2018
PDF: 9 pages
Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321B (23 February 2018); doi: 10.1117/12.2289962
Show Author Affiliations
Robert P. Sarzała, Lodz Univ. of Technology (Poland)
Adam K. Sokół, Lodz Univ. of Technology (Poland)
Łukasz Piskorski, Lodz Univ. of Technology (Poland)
Maciej Kuc, Lodz Univ. of Technology (Poland)
Patrycja Śpiewak, Lodz Univ. of Technology (Poland)
Magdalena Maciniak, Lodz Univ. of Technology (Poland)
Marcin Gębski, Lodz Univ. of Technology (Poland)
Michał Wasiak, Lodz Univ. of Technology (Poland)
Tomasz Czyszanowski, Lodz Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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