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Proceedings Paper

Impact of the top DBR in GaAs-based VCSELs on the threshold current, oxide-aperture diameter, and the cavity photon lifetime
Author(s): Patrycja Śpiewak; Marcin Gębski; Ricardo Rosales; Paulina Komar; Jarosław Walczak; Marta Wieckowska; Robert P. Sarzała; James A. Lott; Michal Wasiak
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Proc. SPIE 10552, Vertical-Cavity Surface-Emitting Lasers XXII, ; doi: 10.1117/12.2289939
Show Author Affiliations
Patrycja Śpiewak, Lodz Univ. of Technology (Poland)
Marcin Gębski, Lodz Univ. of Technology (Poland)
Ricardo Rosales, Technische Univ. Berlin (Germany)
Paulina Komar, Lodz Univ. of Technology (Poland)
Jarosław Walczak, Lodz Univ. of Technology (Poland)
Marta Wieckowska, Lodz Univ. of Technology (Poland)
Robert P. Sarzała, Lodz Univ. of Technology (Poland)
James A. Lott, Technische Univ. Berlin (Germany)
Michal Wasiak, Lodz Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10552:
Vertical-Cavity Surface-Emitting Lasers XXII
Chun Lei; Kent D. Choquette, Editor(s)

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