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Proceedings Paper

Impact of the top DBR in GaAs-based VCSELs on the threshold current and the cavity photon lifetime
Author(s): Patrycja Śpiewak; Marcin Gębski; Nasibeh Haghighi; Ricardo Rosales; Paulina Komar; Jarosław Walczak; Marta Więckowska; Robert P. Sarzała; James A. Lott; Michał Wasiak
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Paper Abstract

This paper presents results of numerical simulations of a GaAs-based vertical-cavity surface-emitting laser, emitting at 980 nm. These simulations concern the influence of the number of top DBR pairs on the laser’s threshold parameters, as well as the optical loses in the cavity. Moreover, electrical parameters such as the device’s resistance and its capacitance-related temporal characteristics are analyzed as functions of the thickness of the top DBR. The simulations suggest that there is a possibility of a significant reduction in the number of pairs in the top DBR that can be beneficial in certain applications.

Paper Details

Date Published: 19 February 2018
PDF: 8 pages
Proc. SPIE 10552, Vertical-Cavity Surface-Emitting Lasers XXII, 105520O (19 February 2018); doi: 10.1117/12.2289939
Show Author Affiliations
Patrycja Śpiewak, Lodz Univ. of Technology (Poland)
Marcin Gębski, Lodz Univ. of Technology (Poland)
Technische Univ. Berlin (Germany)
Nasibeh Haghighi, Technische Univ. Berlin (Germany)
Ricardo Rosales, Technische Univ. Berlin (Germany)
Paulina Komar, Lodz Univ. of Technology (Poland)
Jarosław Walczak, Lodz Univ. of Technology (Poland)
Marta Więckowska, Lodz Univ. of Technology (Poland)
Robert P. Sarzała, Lodz Univ. of Technology (Poland)
James A. Lott, Technische Univ. Berlin (Germany)
Michał Wasiak, Lodz Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10552:
Vertical-Cavity Surface-Emitting Lasers XXII
Chun Lei; Kent D. Choquette, Editor(s)

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