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Proceedings Paper

10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings
Author(s): J. H. Kang; H. Wenzel; V. Hoffmann; E. Freier; L. Sulmoni; R.-S. Unger; S. Einfeldt; T. Wernicke; M. Kneissl
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Paper Abstract

Single longitudinal mode operation of laterally coupled distributed feedback (DFB) laser diodes (LDs) based on GaN containing 10th-order surface Bragg gratings with V-shaped grooves is demonstrated using i-line stepper lithography and inductively coupled plasma etching. A threshold current of 82 mA, a slope efficiency of 1.7 W/A, a single peak emission at 404.5 nm with a full width at half maximum of 0.04 nm and a side mode suppression ratio of > 23 dB at an output power of about 46 mW were achieved under pulsed operation. The shift of the lasing wavelength of DFB LDs with temperature was around three times smaller than that of conventional ridge waveguide LDs.

Paper Details

Date Published: 19 February 2018
PDF: 8 pages
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 105530A (19 February 2018); doi: 10.1117/12.2289929
Show Author Affiliations
J. H. Kang, Ferdinand-Braun-Institut (Germany)
H. Wenzel, Ferdinand-Braun-Institut (Germany)
V. Hoffmann, Ferdinand-Braun-Institut (Germany)
E. Freier, Ferdinand-Braun-Institut (Germany)
L. Sulmoni, Technische Univ. Berlin (Germany)
R.-S. Unger, Ferdinand-Braun-Institut (Germany)
S. Einfeldt, Ferdinand-Braun-Institut (Germany)
T. Wernicke, Technische Univ. Berlin (Germany)
M. Kneissl, Ferdinand-Braun-Institut (Germany)
Technische Univ. Berlin (Germany)

Published in SPIE Proceedings Vol. 10553:
Novel In-Plane Semiconductor Lasers XVII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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