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Proceedings Paper

Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)
Author(s): Tomas K. Uzdavinys; Daniel L. Becerra; Mounir D. Mensi; Ruslan Ivanov; Shuji Nakamura; Steven P. DenBaars; James S. Speck; Saulius Marcinkevicius

Paper Abstract

Band potential fluctuations in InGaN/GaN quantum wells (QWs) induce carrier localization that affects emission linewidth and carrier recombination rate. Alloy composition and well width variations are considered as main sources of the potential fluctuations and are often treated indiscriminately. However, their impact on the emission linewidth and the carrier lifetimes may be different. Besides, the impact of the QW width fluctuations on the linewidth could possibly be reduced via optimization of growth, while random alloy composition fluctuations can hardly be avoided. In this work, we have studied these effects in green-emitting semipolar (20-21) plane InGaN/GaN single QW structures of different well widths (2, 4 and 6 nm) and in structures with different number of QWs (1, 5 and 10). Experiments have been performed by scanning near-field photoluminescence (PL) spectroscopy. It has been found that the well width fluctuations, compared to the InGaN alloy composition variations, play a negligible role in defining the PL linewidth. In multiple QW structures, the alloy composition fluctuations are spatially uncorrelated between the wells. Despite that the 10 QW structure exceeds the critical thickness, no PL linewidth changes related to a structural relaxation have been detected. On the other hand, the well width fluctuations have a large impact on the recombination times. In-plane electric fields, caused by the nonplanarity of QW interfaces, separate electrons and holes into different potential minima increasing the lifetimes in wide QWs.

Paper Details

Date Published: 14 March 2018
Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320P (14 March 2018); doi: 10.1117/12.2289809
Show Author Affiliations
Tomas K. Uzdavinys, KTH Royal Institute of Technology (Sweden)
Daniel L. Becerra, Univ. of California, Santa Barbara (United States)
Mounir D. Mensi, KTH Royal Institute of Technology (Sweden)
Ruslan Ivanov, KTH Royal Institute of Technology (Sweden)
Shuji Nakamura, Univ. of California, Santa Barbara (United States)
Steven P. DenBaars, Univ. of California, Santa Barbara (United States)
James S. Speck, Univ. of California, Santa Barbara (United States)
Saulius Marcinkevicius, KTH Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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