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Proceedings Paper

Nanoscale analyses of axial and radial III-V nanowires for solar cells (Conference Presentation)
Author(s): Valerio Piazza; Himwas Chalermchai; Omar Saket; Marco Vettori; Ahmed Ali; François H. Julien; Nicolas Chauvin; Philippe Regreny; Alain Fave; Michel Gendry; Gilles Patriarche; Pierre Rale; Fabrice Oehler; Stephane Collin; Jean-Chirstophe Harmand; Maria Tchernycheva
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Paper Abstract

The record in photovoltaic conversion efficiency is detained by multi-junction solar cells based on III-V semiconductors. However, the wide adoption of these devices is hindered by their high production cost, to a large extent due to the expensive III-V substrates. As an alternative, a hybrid geometry has been proposed [LaPierre JAP 2011], which combines a 2D Si bottom cell with a III-V nanowire top cell in a tandem device. This approach, which may reach theoretical efficiencies of approx. 34%, requires smaller amounts of expensive III-V materials compared to conventional III-V tandem cells and benefits from the nanowire light trapping effects. In this work, we report the fabrication and nanoscale characterization of two types of nanostructures for solar cells: radial GaAlAs and axial GaAsP p-n junction nanowires. Nanowires are grown by gallium-assisted molecular beam epitaxy using Be and Si as doping sources. The composition (probed by EDX and cathodoluminescence) was adjusted to tune the bandgap toward the optimal value for a III-V-on-Si tandem cell (approx. 1.7 eV). Local I-V characteristics and electron beam induced current (EBIC) microscopy under different biases are used to probe the electrical properties and the generation pattern of individual nanowires. For radial junction nanowires, EBIC mappings revealed a homogeneous collection of carriers on the entire nanowire length. For axial junction nanowires, the doping concentrations and the minority carrier diffusion lengths were extracted from the EBIC generation profiles. The effect of an epitaxial GaP passivating shell on the optical and generation properties was assessed.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10527, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII, 1052708 (14 March 2018); doi: 10.1117/12.2289692
Show Author Affiliations
Valerio Piazza, Ctr. de Nanosciences et de Nanotechnologies (France)
Himwas Chalermchai, Univ. Paris-Sud 11 (France)
Omar Saket, Univ. Paris Sud (France)
CNRS (France)
Univ. Paris Saclay (France)
Marco Vettori, Institut des Nanotechnologies de Lyon (France)
Ahmed Ali, Univ. Paris Sud (France)
CNRS (France)
Univ. Paris Saclay (France)
François H. Julien, Univ. Paris-Sud 11 (France)
CNRS (France)
Univ. Paris Sud (France)
Nicolas Chauvin, Institut des Nanotechnologies de Lyon (France)
Philippe Regreny, Institut des Nanotechnologies de Lyon (France)
Alain Fave, Institut National des Sciences Appliquées de Lyon (France)
Michel Gendry, Ecole Centrale de Lyon (France)
Gilles Patriarche, Univ. Paris Sud (France)
CNRS (France)
Univ. Paris Saclay (France)
Pierre Rale, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Ctr. National de la Recherche Scientifique (France)
Fabrice Oehler, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Ctr. National de la Recherche Scientifique (France)
Stephane Collin, Univ. Paris Saclay (France)
CNRS (France)
Univ. Paris Sud (France)
Jean-Chirstophe Harmand, CNRS (France)
Univ. Paris Sud (France)
Univ. Paris Saclay (France)
Maria Tchernycheva, Univ. Paris-Sud 11 (France)


Published in SPIE Proceedings Vol. 10527:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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