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A hybrid SOI/SiN photonic platform for high-speed and temperature-insensitive CWDM optical transceivers
Author(s): Q. Wilmart; D. Fowler; C. Sciancalepore; K. Hassan; S. Plantier; L. Adelmini; S. Garcia; D. Robin-Brosse; S. Malhouitre; S. Olivier
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Paper Abstract

We introduce our 200 mm Si-SiN photonics platform for high-speed and energy-efficient optical transceiver. We present the fabrication process as well as wafer level characterizations in the O-band of Si and SiN photonic components such as waveguides, grating fiber couplers and Si-SiN interlayer adiabatic transitions. We demonstrate a low thermo-optic coefficient of the SiN layer and a large optical bandwidth for the hybrid Si-SiN photonic devices. This enhanced Si-SiN platform is of great importance for the realization of CWDM transceivers for which low temperature sensitivity and large bandwidth are needed.

Paper Details

Date Published: 22 February 2018
PDF: 7 pages
Proc. SPIE 10537, Silicon Photonics XIII, 1053709 (22 February 2018); doi: 10.1117/12.2289633
Show Author Affiliations
Q. Wilmart, Univ. Grenoble Alpes (France)
CEA-LETI (France)
D. Fowler, Univ. Grenoble Alpes (France)
CEA-LETI (France)
C. Sciancalepore, Univ. Grenoble Alpes (France)
CEA-LETI (France)
K. Hassan, Univ. Grenoble Alpes (France)
CEA-LETI (France)
S. Plantier, Univ. Grenoble Alpes (France)
CEA-LETI (France)
L. Adelmini, Univ. Grenoble Alpes (France)
CEA-LETI (France)
S. Garcia, Univ. Grenoble Alpes (France)
CEA-LETI (France)
D. Robin-Brosse, Univ. Grenoble Alpes (France)
CEA-LETI (France)
S. Malhouitre, Univ. Grenoble Alpes (France)
CEA-LETI (France)
S. Olivier, Univ. Grenoble Alpes (France)
CEA-LETI (France)


Published in SPIE Proceedings Vol. 10537:
Silicon Photonics XIII
Graham T. Reed; Andrew P. Knights, Editor(s)

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