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Proceedings Paper

The influence of the VCSEL design on its electrical modulation properties
Author(s): Paulina Komar; Patrycja Śpiewak; Marcin Gębski; Ricardo Rosales; Luca Sulmoni; Magdalena Marciniak; Tomasz Czyszanowski; James A. Lott; Michał Wasiak
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Paper Abstract

Here we investigate the influence of the p- and n-oxide-aperture radii in all-semiconductor GaAs-based verticalcavity surface-emitting lasers (VCSELs), designed for 980 nm, on the modulation time constant (τ). Our analysis shows that the minimum value of τ is obtained if the oxide layers on both sides of the junction have identical depths. The simulations of the number of oxide layers on both p- and n-type sides reveal that double p- and n-oxidations are the most effective in the reduction of the modulation time constant as compared to single oxide layers.

Paper Details

Date Published: 19 February 2018
PDF: 8 pages
Proc. SPIE 10552, Vertical-Cavity Surface-Emitting Lasers XXII, 105520M (19 February 2018); doi: 10.1117/12.2289582
Show Author Affiliations
Paulina Komar, Lodz Univ. of Technology (Poland)
Patrycja Śpiewak, Lodz Univ. of Technology (Poland)
Marcin Gębski, Lodz Univ. of Technology (Poland)
Technische Univ. Berlin (Germany)
Ricardo Rosales, Technische Univ. Berlin (Germany)
Luca Sulmoni, Technische Univ. Berlin (Germany)
Magdalena Marciniak, Lodz Univ. of Technology (Poland)
Technische Univ. Berlin (Germany)
Tomasz Czyszanowski, Lodz Univ. of Technology (Poland)
James A. Lott, Technische Univ. Berlin (Germany)
Michał Wasiak, Lodz Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10552:
Vertical-Cavity Surface-Emitting Lasers XXII
Chun Lei; Kent D. Choquette, Editor(s)

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