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Do we know the cause of luminescence broadening in InGaN quantum wells? (Conference Presentation)
Author(s): Lucja Marona; Przemyslaw Wisniewski; Robert Czernecki; Piotr Perlin
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Paper Abstract

The linewidth of the luminescence should be the reflection of the system disorder, and the natural way of thinking is to associate this disorder with local variation of In composition and/or quantum wells thickness. Problem of the emission linewidth of InGaN quantum structures has been discussed over last two decades. In the early work of O’Donnel et al.1, the remarkable, universal character of the emission broadening in InGaN quantum wells and epilayers was reported. Authors argued that since the line broadening is apparently independent of the growth method, it must reflect an inherent feature of these structures. Indeed, up to our knowledge there is presently no data showing a direct relation between the emission linewidth and microscopic landscape of InGaN structures. To look more closely on the origin of emission line broadening we performed cathodoluminescence (CL) mapping, using Hitachi SU-70 scanning electron microscope equipped with Horiba Jobin Yvon optical detection system. We analyzed InGaN/GaN quantum wells in wide range of In content. Our measuments show that over large span of image diameter, the cathodoluminescence linewidth remains almost constant, meaning that what we perceive as the visible In fluctuation landscape is practically irrelevant. Most likely the observed source of broadening is related to submicron size effects related to strong carriers localization. Reference: 1. K. P. O’Donnell, T. Breitkopf, H. Kalt, W. Van der Stricht, I. Moerman, P. Demeester, and P. G. Middleton, “Optical linewidths of InGaN light emitting diodes and epilayers”, Appl. Phys. Lett. 70, 1843 (1997)

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320O (14 March 2018); doi: 10.1117/12.2289550
Show Author Affiliations
Lucja Marona, Institute of High Pressure Physics (Poland)
TopGaN (Poland)
Przemyslaw Wisniewski, Institute of High Pressure Physics (Poland)
Robert Czernecki, Institute of High Pressure Physics (Poland)
TopGaN (Poland)
Piotr Perlin, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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