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Proceedings Paper

200mm full CMOS-compatible hybrid III-V/Si laser process integration on a mature silicon-photonic platform (Conference Presentation)
Author(s): Bertrand Szelag; Karim Hassan; Elodie Ghegin; Philippe Rodriguez; Salma bensalem; Fabrice Nemouchi; Laetitia Adelmini; Toufiq Bria; Mélisa Brihoum; Pierre Brianceau; Elisa Vermande; Olivier Pesenti; Antoine Schembri; Marie-Christine Roure; Brigitte Montmayeul; Loïc Sanchez; Romain Crochemore; Sebastien Dominguez; Christophe Jany

Paper Abstract

Silicon photonic platforms are becoming more and more mature with competitive devices suitable for increasing needs of HPC (High Performance Computing) systems and datacenters. Compared to bulk III-V technologies, Si photonic technologies are suffering from the lack of integrated light source. Several works have been done in the past years to integrate laser on silicon using III-V direct bonding on top of patterned silicon. These demonstrations were using a CMOS compatible process for the silicon part but all the process steps following the introduction of the III-V material were done with small wafer diameter III-V fabrication lines. With such integrations, the cost advantage of silicon photonics based on the use of CMOS platforms and large wafer format is no more valid. In this paper we present the integration of a hybrid III-V/Si laser using a fully CMOS compatible 200mm technology. The laser is integrated in a mature photonic platform. The additional process modules required for this integration will be deeply described. These modules are localized silicon thickening using damascene process, Bragg reflector patterning with DUV lithography, III-V patterning and ohmic contact formation with no lift-off and without noble metal. This integration is compatible with a multi metal levels planar BEOL, mandatory for photonic circuit design. The first DFB lasers fabricated with this new platform are operating at 1310nm with a threshold current around 60mA, a SMSR larger than 45dB and more than 1.5mW optical power in the output waveguide. New laser designs, specifically adapted for this new process, will be introduced and fabricated.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10537, Silicon Photonics XIII, 1053707 (14 March 2018); doi: 10.1117/12.2289477
Show Author Affiliations
Bertrand Szelag, CEA-LETI (France)
Karim Hassan, CEA-LETI (France)
Elodie Ghegin, STMicroelectronics (France)
Philippe Rodriguez, CEA-LETI (France)
Salma bensalem, CEA-LETI (France)
Fabrice Nemouchi, CEA-LETI (France)
Laetitia Adelmini, CEA-LETI (France)
Toufiq Bria, CEA-LETI (France)
Mélisa Brihoum, CEA-LETI (France)
Pierre Brianceau, CEA-LETI (France)
Elisa Vermande, CEA-LETI (France)
Olivier Pesenti, CEA-LETI (France)
Antoine Schembri, CEA-LETI (France)
Marie-Christine Roure, CEA-LETI (France)
Brigitte Montmayeul, CEA-LETI (France)
Loïc Sanchez, CEA-LETI (France)
Romain Crochemore, CEA-LETI (France)
Sebastien Dominguez, STMicroelectronics (France)
Christophe Jany, CEA-LETI (France)


Published in SPIE Proceedings Vol. 10537:
Silicon Photonics XIII
Graham T. Reed; Andrew P. Knights, Editor(s)

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