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Proceedings Paper

Degradation processes and origin in InGaN-based high-power photodetectors
Author(s): Carlo De Santi; M. Meneghini; A. Caria; E. Dogmus; M. Zegaoui; F. Medjdoub; E. Zanoni; G. Meneghesso
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Paper Abstract

GaN-based multi-quantum well devices are promising candidates as photodetectors in the UV to visible spectral range. Their complex structure and the extreme input optical power density still poses problems of reliability. In the devices under test, degradation takes place when the optical power density reaches values higher than 44 W/cm2 , and consists in a reduction in the efficiency of the device and in its output current. This degradation process is not sudden and is caused by a gradual increase in the defect concentration, detected by means of photocurrent spectroscopy experiments, that suggest the role of gallium vacancies and/or their complexes as the physical origin. A secondary effect is the reduction in open circuit voltage, likely originating from an improvement in dopant and/or contact quality.

Paper Details

Date Published: 23 February 2018
PDF: 7 pages
Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321J (23 February 2018); doi: 10.1117/12.2289466
Show Author Affiliations
Carlo De Santi, Univ. degli Studi di Padova (Italy)
M. Meneghini, Univ. degli Studi di Padova (Italy)
A. Caria, Univ. degli Studi di Padova (Italy)
E. Dogmus, Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS (France)
M. Zegaoui, Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS (France)
F. Medjdoub, Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS (France)
E. Zanoni, Univ. degli Studi di Padova (Italy)
G. Meneghesso, Univ. degli Studi di Padova (Italy)


Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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