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Entangled photon generation in AlGaAs waveguides (Conference Presentation)
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Paper Abstract

The III-V semiconductor AlGaAs is an ideal material for nonlinear optics. It has large second and third order nonlinearities, a low two-photon absorption coefficient at the half band gap and allows for the easy fabrication of integrated optical devices. In addition, AlGaAs can be used to directly integrate photodiodes, modulators and passive optical elements on the same chip as the nonlinear elements.  This talk will highlight the benefits of this nonlinear material for the generation of entangled photon states using both spontaneous down conversion and spontaneous four wave mixing.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 1054029 (14 March 2018); doi: 10.1117/12.2289449
Show Author Affiliations
Stewart J. Aitchison, Univ. of Toronto (Canada)


Published in SPIE Proceedings Vol. 10540:
Quantum Sensing and Nano Electronics and Photonics XV
Manijeh Razeghi; Gail J. Brown; Jay S. Lewis; Giuseppe Leo, Editor(s)

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