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Proceedings Paper

High efficiency GaN-based near UV light emitting diodes with asymmetric triangular multiple quantum wells
Author(s): Heng Li; Chia-Jui Chang; Shiou-Yi Kuo; Jun-Rong Chen; Tien-Chang Lu
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Paper Abstract

Near-ultraviolet (NUV) light-emitting diodes (LEDs) have found many applications in the areas such as UV curing, bio-chemical sensors etc. However, the internal quantum efficiency (IQE) of NUV-LEDs show relatively lower value than blue LEDs. In previous research, asymmetric triangular MQWs with gallium face-oriented inclination in the blue wavelength band are demonstrated to have higher emission efficiency and lower efficiency droop. In this study, we surprisingly found different trend in NUV-LEDs. Compared to blue LEDs, NUV-LEDs tend to have shallower quantum wells and less ability to localize holes. In the simulation results, holes are more confined within nitrogen face-oriented inclination than that in MQWs with gallium face-oriented inclination and the IQE are improved about 10%.

Paper Details

Date Published: 14 February 2018
PDF: 6 pages
Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 105540J (14 February 2018); doi: 10.1117/12.2289389
Show Author Affiliations
Heng Li, National Chiao Tung Univ. (Taiwan)
Chia-Jui Chang, National Chiao Tung Univ. (Taiwan)
Shiou-Yi Kuo, National Chiao Tung Univ. (Taiwan)
Lextar Electronics Corp. (Taiwan)
Jun-Rong Chen, Lextar Electronics Corp. (Taiwan)
Tien-Chang Lu, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 10554:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII
Jong Kyu Kim; Michael R. Krames; Martin Strassburg; Li-Wei Tu, Editor(s)

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