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Proceedings Paper

Plasmonic metasurface by covalent bonding-assisted nanotransfer printing
Author(s): SoonHyoung Hwang; Sohee Jeon; Jun Ho Jeong; Jae Ryoun Youn
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Paper Abstract

Plasmonic metasurfaces have been receiving tremendous attention because of their extraordinary optical properties. However, time consuming and expensive fabrication methods such as electron beam lithography or focused ion beam (FIB) hinder its commercial application to sensors, color filters, and photovoltaic solar cells. In this study, we demonstrate that metal-dielectric-metal reflective meta-surfaces can be fabricated in a simple and low-cost way using a one-step covalent bonding-assisted nanotransfer process. We prepared various sizes of nanoscale hole-type patterned silicon master, because the represented color depends on the hole size and period. Ag and SiO2 were deposited onto the replicated polymer stamp from the silicon master, then transferred onto the Al-deposited glass wafer. Strong covalent bonds were formed rapidly between oxygen from the SiO2 and Si from the adhesive. In this way, we easily fabricated metasurfaces using a one-step nanotransfer process. Finally, finite-difference time-domain method (FDTD) simulation was carried out whose outcome matched experimental results, thus verifying our approach.

Paper Details

Date Published: 22 February 2018
PDF: 6 pages
Proc. SPIE 10544, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XI, 1054407 (22 February 2018); doi: 10.1117/12.2289370
Show Author Affiliations
SoonHyoung Hwang, Seoul National Univ. (Korea, Republic of)
Korea Institute of Machinery and Materials (Korea, Republic of)
Sohee Jeon, Korea Institute of Machinery and Materials (Korea, Republic of)
Jun Ho Jeong, Korea Institute of Machinery and Materials (Korea, Republic of)
Jae Ryoun Youn, Seoul National Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10544:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XI
Georg von Freymann; Winston V. Schoenfeld; Raymond C. Rumpf, Editor(s)

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