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Ge-based photonic devices for CMOS integration (Conference Presentation)
Author(s): Jurgen Michel; Ruitao Wen; Danhao Ma; Gianluca Roscioli; Xueying Zhao
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Paper Abstract

This presentation will give an overview over germanium photonic devices that are monolithically integrated into a Si CMOS process and then focus on our current work on single photon detectors and Ge modulators. Due to the quasi direct bandgap behavior of Ge and its compatibility with Si CMOS technology, germanium photonic devices have been developed successfully. Ge photodetectors perform similar to III-V photodetectors and are preferred when very low dark currents are not needed. Ge modulators show promise for high speed devices with ultra-low power consumption. Ge photodetectors and modulators are already used in commercially available products, however, new applications and increased performance requirements call for better materials quality and new designs. Ge lasers have been demonstrated and more development is needed to determine the application space. These lasers are at the early stages of development and show great potential for a large number of applications.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10537, Silicon Photonics XIII, 105370O (14 March 2018); doi: 10.1117/12.2289284
Show Author Affiliations
Jurgen Michel, Massachusetts Institute of Technology (United States)
Ruitao Wen, Massachusetts Institute of Technology (United States)
Danhao Ma, Massachusetts Institute of Technology (United States)
Gianluca Roscioli, Massachusetts Institute of Technology (United States)
Xueying Zhao, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 10537:
Silicon Photonics XIII
Graham T. Reed; Andrew P. Knights, Editor(s)

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