Share Email Print

Proceedings Paper

Design and fabrication of Bragg-grating-coupled high Q-factor ring resonator using liquid-source CVD-deposited Si3N4 film at 150deg C (Conference Presentation)
Author(s): Xiaoyang Cheng; Jianxun Hong; Shiyoshi Yokoyama
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this work, authors report for the first time on CMOS-compatible integrated micro-ring resonators with Bragg gratings coupled at both bus ends using a high quality Si3N4 film deposited by the liquid source CVD (LSCVD) method at ultra-low temperature of 150 ºC. Generally, the Si3N4 films deposited by either LPCVD or PECVD have demonstrated high tensile stress which prevents a thicker film deposition greater than 250 nm-thick with low loss state. Considering above, LSCVD is developed to fabricate the high quality Si3N4 films of several micrometers thickness without the limitation of cracking using the liquid SiN-X source at only 150 ºC, which guaranteed Kerr-based nonlinearity while featured high thermal compatibility with existing front-end electronic devices and silicon photonics especially those involving flexible/organic substrate. Furthermore, LSCVD deposition without needing SiH4 and NH3 chemistry also avoided the dangling Si-H and N-H bonds, which usually occur to PECVD and LPCVD and required extra 1200 ºC post-annealing to overcome such intrinsic absorption loss in C-band. We demonstrated high Q-factor ring resonators in this Si3N4 films, showing Q-value of over 1.3 × 10^5. A 3-dB bandwidth of around 70 nm for grating coupler was also achieved with 1550 nm central wavelength, while the coupling efficiency from fiber to grating is less than 4 dB. In this case, the measured spectral bandwidth can cover most of operating frequency of C-band and L-band. The LSCVD deposited Si3N4 is therefore a promising CMOS-compatible integration platform for nonlinear functional devices and circuits at telecommunication wavelengths.

Paper Details

Date Published: 14 March 2018
Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, 1053510 (14 March 2018); doi: 10.1117/12.2289217
Show Author Affiliations
Xiaoyang Cheng, Kyushu Univ. (Japan)
Jianxun Hong, Kyushu Univ. (Japan)
Shiyoshi Yokoyama, Kyushu Univ. (Japan)

Published in SPIE Proceedings Vol. 10535:
Integrated Optics: Devices, Materials, and Technologies XXII
Sonia M. García-Blanco; Pavel Cheben, Editor(s)

© SPIE. Terms of Use
Back to Top