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Silicon slot waveguide dispersion analysis and engineering through dynamic excess carrier generation
Author(s): Hosam I. Mekawey; Yehea Ismail; Mohamed A. Swillam
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Paper Abstract

This work studies the fundamental mode and dispersion relation of a slot waveguide made of intrinsic silicon as the high index region and Air as the low index region by solving the full vectorial wave equation using vectorial finite element method. The objective is to identify the effect of dynamically inducing high excess carrier concentrations in silicon on the slot mode and it dispersion. Tracking the slot mode over a range of wavelengths reveals a reduction in the slot mode effective index upon introducing high concentration of excess carriers. This can be exploited in the dynamic tuning of a silicon slot waveguide dispersion and hence the operation of any sensor based on such waveguide by dynamically generate excess carrier at runtime.

Paper Details

Date Published: 22 February 2018
PDF: 7 pages
Proc. SPIE 10537, Silicon Photonics XIII, 105371G (22 February 2018); doi: 10.1117/12.2289101
Show Author Affiliations
Hosam I. Mekawey, The American Univ. in Cairo (Egypt)
Zewail City of Science and Technology (Egypt)
Yehea Ismail, The American Univ. in Cairo (Egypt)
Zewail City of Science and Technology (Egypt)
Mohamed A. Swillam, The American Univ. in Cairo (Egypt)


Published in SPIE Proceedings Vol. 10537:
Silicon Photonics XIII
Graham T. Reed; Andrew P. Knights, Editor(s)

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