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Proceedings Paper

Raman-scattering characterization of atomic layer semiconductor superlattices
Author(s): David J. Lockwood
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Paper Abstract

Raman spectroscopy is a widely applied technique for investigating the dynamical and structural properties of atomic-layer semiconductor superlawces. The low-frequency acoustic phonons in such structures are influenced by the average lattice properties, the overall periodicities within the structure, and the boundary conditions, whereas the optic phonons are sensitive to the local structure, the nature of the interfaces, and the intralayer strain. Examples taken from recent studies of phonons in thin layer superlattices composed of GaAS/AlAS, InAs/GaSb and SilGe are used to demonstrate the usefulness of the Raman technique.

Paper Details

Date Published: 1 November 1990
PDF: 12 pages
Proc. SPIE 1336, Raman and Luminescence Spectroscopies in Technology II, (1 November 1990); doi: 10.1117/12.22889
Show Author Affiliations
David J. Lockwood, National Research Council Cana (Canada)


Published in SPIE Proceedings Vol. 1336:
Raman and Luminescence Spectroscopies in Technology II
Fran Adar; James E. Griffiths, Editor(s)

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