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Proceedings Paper

Monolithic integration of strained-layer InGaAs/GaAs/AlGaAs lasers with photodiodes by selective-area MOCVD
Author(s): Robert M. Lammert; Pablo V. Mena; David V. Forbes; Mark L. Osowski; Steve M. Kang; James J. Coleman
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Paper Abstract

Characteristics of strained-layer InGaAs/GaAs/AlGaAs lasers with monolithically integrated photodiodes fabricated by selective-area epitaxy are presented. Threshold currents as low as 8 mA (approximately 300 A/cm2) were obtained for uncoated devices operating cw at room temperature. Responsivities of 71, 41, and 6.7 (mu) A/mW was obtained for devices with photodiode etched facet angles of 3 degree(s), 14 degree(s), and 45 degree(s), respectively, and a photodiode bias of 0 V.

Paper Details

Date Published: 27 December 1995
PDF: 8 pages
Proc. SPIE 2613, Emerging Components and Technologies for All-Optical Networks, (27 December 1995); doi: 10.1117/12.228874
Show Author Affiliations
Robert M. Lammert, Univ. of Illinois/Urbana-Champaign (United States)
Pablo V. Mena, Univ. of Illinois/Urbana-Champaign (United States)
David V. Forbes, Univ. of Illinois/Urbana-Champaign (United States)
Mark L. Osowski, Univ. of Illinois/Urbana-Champaign (United States)
Steve M. Kang, Univ. of Illinois/Urbana-Champaign (United States)
James J. Coleman, Univ. of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 2613:
Emerging Components and Technologies for All-Optical Networks
Emil S. Koteles; Alan Eli Willner, Editor(s)

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