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Proceedings Paper

Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique
Author(s): Younghyun Kim; Yunsu Sung; Jung-Tack Yang; Woo-Young Choi
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Paper Abstract

The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

Paper Details

Date Published: 27 February 2018
PDF: 6 pages
Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140C (27 February 2018); doi: 10.1117/12.2288639
Show Author Affiliations
Younghyun Kim, Yonsei Univ. (Korea, Republic of)
Yunsu Sung, Yonsei Univ. (Korea, Republic of)
Jung-Tack Yang, Yonsei Univ. (Korea, Republic of)
Woo-Young Choi, Yonsei Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10514:
High-Power Diode Laser Technology XVI
Mark S. Zediker, Editor(s)

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