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Proceedings Paper

Characterization of Si-MOSFET CMOS devices for detection at 170 to 250 GHz
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Proc. SPIE 10531, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI, ; doi: 10.1117/12.2288454
Show Author Affiliations
Katherine E. Seery, Rochester Institute of Technology (United States)
Zoran Ninkov, Rochester Institute of Technology (United States)
Jack Horowitz, Rochester Institute of Technology (United States)
Daniel Newman, Harris Corp. (United States)
Kenneth D. Fourspring, Harris Corp. (United States)
Andrew P. Sacco, Harris Corp. (United States)
Paul P. K. Lee, Univ. of Rochester (United States)
Zeljko Ignjatovic, Univ. of Rochester (United States)
Moeen Hassanalieragh, Univ. of Rochester (United States)
Judith L. Pipher, Univ. of Rochester (United States)
Craig W. McMurtry, Univ. of Rochester (United States)


Published in SPIE Proceedings Vol. 10531:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI
Laurence P. Sadwick; Tianxin Yang, Editor(s)

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