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Proceedings Paper

Comparison of distributed Bragg reflector ridge waveguide diode lasers and monolithic master oscillator power amplifiers
Author(s): Nils Werner; Jan Wegemund; Sebastian Gerke; David Feise; Frank Bugge; Katrin Paschke; Günther Tränkle
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Paper Abstract

Diode lasers with ridge waveguide structures and wavelength stabilization by a distributed Bragg-reflector (DBR) are key components for many different applications. These lasers provide diffraction limited laser emission in a single spectral mode, while an arbitrary emission wavelength can be chosen as long as the semiconductor allows for amplification. Furthermore, the DBR grating can be fabricated during the lateral structuring of the device which makes them well suited for mass production. A variety of different concepts can be used for the actual realization of the laser. While standard DBR ridge waveguide lasers (DBR-RWL) with a DBR as reflection grating provide up to 1W optical output power, the DBR can be also used as transmission grating for improved efficiency. Furthermore, more complex structures like monolithic master oscillator power amplifiers (MOPA), which show less spectral mode hops than DBR-RWLs, have been fabricated. The wide range of possible applications have different requirements on the emission characteristic of the used lasers. While the lasers can fulfill the requirements on the emission spectrum and the optical output power, the effects due to optical feedback from optical elements of the setup may limit their practical use in the respective application. Thus, it is of high importance to analyze the emission behavior of the different laser designs at various operation conditions with and without optical feedback. Here, the detailed investigation of the emission characteristics of lasers at an exemplary emission wavelength of 1120 nm is be presented.

Paper Details

Date Published: 19 February 2018
PDF: 9 pages
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 105531D (19 February 2018); doi: 10.1117/12.2288352
Show Author Affiliations
Nils Werner, Ferdinand-Braun-Institut (Germany)
Jan Wegemund, Ferdinand-Braun-Institut (Germany)
Sebastian Gerke, Ferdinand-Braun-Institut (Germany)
David Feise, Ferdinand-Braun-Institut (Germany)
Frank Bugge, Ferdinand-Braun-Institut (Germany)
Katrin Paschke, Ferdinand-Braun-Institut (Germany)
Günther Tränkle, Ferdinand-Braun-Institut (Germany)

Published in SPIE Proceedings Vol. 10553:
Novel In-Plane Semiconductor Lasers XVII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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