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Proceedings Paper

Numerical modelling of high efficiency InAs/GaAs intermediate band solar cell
Author(s): Ali Imran; Jianliang Jiang; Debora Eric; Muhammad Yousaf
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Paper Abstract

Quantum Dots (QDs) intermediate band solar cells (IBSC) are the most attractive candidates for the next generation of photovoltaic applications. In this paper, theoretical model of InAs/GaAs device has been proposed, where we have calculated the effect of variation in the thickness of intrinsic and IB layer on the efficiency of the solar cell using detailed balance theory. IB energies has been optimized for different IB layers thickness. Maximum efficiency 46.6% is calculated for IB material under maximum optical concentration.

Paper Details

Date Published: 12 January 2018
PDF: 12 pages
Proc. SPIE 10622, 2017 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices, 106220A (12 January 2018); doi: 10.1117/12.2288107
Show Author Affiliations
Ali Imran, Beijing Institute of Technology (China)
Jianliang Jiang, Beijing Institute of Technology (China)
Debora Eric, Beijing Institute of Technology (China)
Muhammad Yousaf, Peking Univ. (China)


Published in SPIE Proceedings Vol. 10622:
2017 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices
Baojun Li; Xingjun Wang; Ya Sha Yi; Liquan Dong, Editor(s)

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