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Proceedings Paper

Nanolasers operating in the regime of strong coupling (Conference Presentation)
Author(s): Christopher Gies; F. Gericke; Paul Gartner; S. Holzinger; C. Hopfmann; Tobias Heindel; J. Wolters; Christian Schneider; Matthias Florian; Frank Jahnke; Sven Höfling; Martin Kamp; Stephan Reitzenstein
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Paper Abstract

The development and physical understanding of high-beta nanolasers operating in regime of cavity-quantum-electrodynamics (cQED) is a highly interdisciplinary field of research, involving important aspects of nanotechnology, quantum optics, and semiconductor physics. Of particular interest is the quantum limit of operation, in which a few or even a single emitter act as gain material. The regime of strong light-matter coupling is typically associated with weak excitation. With current realizations of cQED systems, strong coupling may persevere even at elevated excitation levels sufficient to cross the threshold to lasing. In the presence of stimulated emission, the vacuum-Rabi doublet in the emission spectrum is modified and the established criterion for strong coupling no longer applies. Based on an analytic approach, we provide a generalized criterion for strong coupling and the corresponding emission spectrum that includes the influence of higher Jaynes-Cummings states. The applicability is demonstrated in a theory-experiment comparison of a state-of-the-art few-emitter quantum-dot (QD)–micropillar laser as a particular realization of the driven dissipative Jaynes-Cummings model [1]. Furthermore, we address the question if and for which parameters true single-emitter lasing can be achieved. By using a master-equation approach for up to 8 QDs coupled to the mode, we provide evidence for the coexistence of strong coupling and lasing in our system in the presence of background emitter contributions by identifying signatures in the mean-photon number, the photon-autocorrelation function, and the emission linewidth. [1] C. Gies et al., accepted for publication in PRA, arxiv:1606.05591

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 105260I (14 March 2018); doi: 10.1117/12.2287760
Show Author Affiliations
Christopher Gies, Univ. Bremen (Germany)
F. Gericke, Technische Univ. Berlin (Germany)
Paul Gartner, National Institute of Materials Physics (Romania)
S. Holzinger, Technische Univ. Berlin (Germany)
C. Hopfmann, Technische Univ. Berlin (Germany)
Tobias Heindel, Technische Univ. Berlin (Germany)
J. Wolters, Technische Univ. Berlin (Germany)
Christian Schneider, Universität Würzburg (Germany)
Matthias Florian, Univ. Bremen (Germany)
Frank Jahnke, Univ. Bremen (Germany)
Sven Höfling, Julius-Maximilians-Univ. Würzburg (Germany)
Martin Kamp, Julius-Maximilians-Univ. Würzburg (Germany)
Stephan Reitzenstein, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 10526:
Physics and Simulation of Optoelectronic Devices XXVI
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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