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Proceedings Paper

Study of high power generation in UTC-PD at 110-210 GHz
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Paper Abstract

We designed and fabricated a low-bias operational uni-travelling carrier photodiode (UTC-PD) structure, which can be operated at over 100 GHz. The main structure of the device consisted of p-doped InGaAs for the photo-absorption layer and non-doped InP for the carrier collector layer, to obtain both a high electron drift velocity at a low bias and a small CR time constant based on the pn-junction capacitance. Through an on-wafer probing test, the frequency response was measured up to 210 GHz using a 1 mm coaxial connecter type (DC-110GHz), W-band (75–110 GHz) and G-band (140–220 GHz) waveguide probe with a spectrum analyzer. In the measurement results, a large bandwidth of 10 MHz-110 GHz could be obtained with good flatness within ±1 dB. When the W-band and G-band performance were characterized, the high-power characteristic of -3.8 dBm could be achieved at 106 GHz. and the output power level of - 19.8 dBm could be confirmed at 210 GHz as well.

Paper Details

Date Published: 23 February 2018
PDF: 7 pages
Proc. SPIE 10531, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI, 1053115 (23 February 2018); doi: 10.1117/12.2287589
Show Author Affiliations
Toshimasa Umezawa, National Institute of Information and Communications Technology (Japan)
Atsushi Kanno, National Institute of Information and Communications Technology (Japan)
Kouichi Akahane, National Institute of Information and Communications Technology (Japan)
Atsushi Matsumoto, National Institute of Information and Communications Technology (Japan)
Naokatsu Yamamoto, National Institute of Information and Communications Technology (Japan)
Tetsuya Kawanishi, National Institute of Information and Communications Technology (Japan)
Waseda Univ. (Japan)


Published in SPIE Proceedings Vol. 10531:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI
Laurence P. Sadwick; Tianxin Yang, Editor(s)

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