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Integration of electro-absorption modulator in a vertical-cavity surface-emitting laser
Author(s): L. Marigo-Lombart; S. Calvez; A. Arnoult; A. Rumeau; C. Viallon; H. Thienpont; K. Panajotov; G. Almuneau
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Paper Abstract

VCSELs became dominant laser sources in many short optical link applications such as datacenter, active cables, etc. Actual standards and commercialized VCSEL are providing 25 Gb/s data rates, but new solutions are expected to settle the next device generation enabling 100 Gb/s. Directly modulated VCSEL have been extensively studied and improved to reach bandwidths in the range of 26-32 GHz [Chalmers, TU Berlin], however at the price of increased applied current and thus reduced device lifetime. Furthermore, the relaxation oscillation limit still subsists with this solution. Thus, splitting the emission and the modulation functions as done with DFB lasers is a very promising alternative [TI-Tech, TU Berlin]. Here, we study the vertical integration of an ElectroAbsorption Modulator (EAM) within a VCSEL, where the output light of the VCSEL is modulated through the EAM section. In our original design, we finely optimized the EAM design to maximize the modulation depth by implementing perturbative Quantum Confined Stark Effect (QCSE) calculations, while designing the vertical integration of the EAM without penalty on the VCSEL static performances. We will present the different fabricated vertical structures, as well as the experimental electrical and optical static measurements for those configurations demonstrating a very good agreement with the reflectivity and absorption simulations obtained for both the VCSEL and the EAM-VCSEL structures. Finally, to reach very high frequency modulation we studied the BCB electrical properties up to 110 GHz and investigated coplanar and microstrip lines access to decrease both the parasitic capacitance and the influence of the substrate.

Paper Details

Date Published: 19 February 2018
PDF: 7 pages
Proc. SPIE 10552, Vertical-Cavity Surface-Emitting Lasers XXII, 105520L (19 February 2018); doi: 10.1117/12.2287465
Show Author Affiliations
L. Marigo-Lombart, Lab. d'Analyse et d'Architecture des Systèmes (France)
Vrije Univ. Brussel (Belgium)
S. Calvez, Lab. d'Analyse et d'Architecture des Systèmes (France)
A. Arnoult, Lab. d'Analyse et d'Architecture des Systèmes (France)
A. Rumeau, Lab. d'Analyse et d'Architecture des Systèmes (France)
C. Viallon, Lab. d'Analyse et d'Architecture des Systèmes (France)
H. Thienpont, Vrije Univ. Brussel (Belgium)
K. Panajotov, Vrije Univ. Brussel (Belgium)
G. Almuneau, Lab. d'Analyse et d'Architecture des Systèmes (France)

Published in SPIE Proceedings Vol. 10552:
Vertical-Cavity Surface-Emitting Lasers XXII
Chun Lei; Kent D. Choquette, Editor(s)

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