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Proceedings Paper

Passive mode-locking of 3.25um GaSb-based type-I quantum-well cascade diode lasers
Author(s): Tao Feng; Leon Shterengas; Gela Kipshidze; Takashi Hosoda; Meng Wang; Gregory Belenky
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Paper Abstract

Passively mode-locked type-I quantum well cascade diode lasers emitting in the methane absorption band near 3.25 μm were designed, fabricated and characterized. The deep etched ~5.5-μm-wide single spatial mode ridge waveguide design utilizing split-contact architecture was implemented. The devices with absorber to gain section length ratios of 11% and 5.5% were studied. Lasers with the longer absorber section (~300 μm) generated smooth bell-shape-like emission spectrum with about 30 lasing modes at full-width-at-half-maximum level. Devices with reverse biased absorber section demonstrated stable radio frequency beat with nearly perfect Lorentzian shape over four orders of magnitude of intensity. The estimated pulse-to-pulse timing jitter was about 110 fs/cycle. Laser generated average power of more than 1 mW in mode-locked regime.

Paper Details

Date Published: 19 February 2018
PDF: 9 pages
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 1055319 (19 February 2018); doi: 10.1117/12.2287463
Show Author Affiliations
Tao Feng, Stony Brook Univ. (United States)
Leon Shterengas, Stony Brook Univ. (United States)
Gela Kipshidze, Stony Brook Univ. (United States)
Takashi Hosoda, Stony Brook Univ. (United States)
Meng Wang, Stony Brook Univ. (United States)
Gregory Belenky, Stony Brook Univ. (United States)


Published in SPIE Proceedings Vol. 10553:
Novel In-Plane Semiconductor Lasers XVII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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