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Proceedings Paper

The effect of excited state occupation and phonon broadening in the determination of the non-equilibrium hot carrier temperature in InGaAsP quantum well absorbers
Author(s): Hamidreza Esmaielpour; Vincent R. Whiteside; Louise C. Hirst; Joseph G. Tischler; Robert J. Walters; Ian R. Sellers
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Proc. SPIE 10527, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII, ; doi: 10.1117/12.2287446
Show Author Affiliations
Hamidreza Esmaielpour, The Univ. of Oklahoma (United States)
Vincent R. Whiteside, The Univ. of Oklahoma (United States)
Louise C. Hirst, U.S. Naval Research Lab. (United States)
Joseph G. Tischler, U.S. Naval Research Lab. (United States)
Robert J. Walters, U.S. Naval Research Lab. (United States)
Ian R. Sellers, The Univ. of Oklahoma (United States)


Published in SPIE Proceedings Vol. 10527:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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