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Proceedings Paper

Unintentionally formed thin barriers of elevated Al contents in a deep-UV AlGaN quantum well for generating favored compressive strain
Author(s): Chia-Ying Su; Meng-Che Tsai; Keng-Ping Chou; Huang-Hui Lin; Ming-Yen Su; Hsin-Chun Chiang; Yuh-Renn Wu; Yean-Woei Kiang; Chih-Chung Yang
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Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, ; doi: 10.1117/12.2287333
Show Author Affiliations
Chia-Ying Su, National Taiwan Univ. (Taiwan)
Meng-Che Tsai, National Taiwan Univ. (Taiwan)
Keng-Ping Chou, National Taiwan Univ. (Taiwan)
Huang-Hui Lin, National Taiwan Univ. (Taiwan)
Ming-Yen Su, National Taiwan Univ. (Taiwan)
Hsin-Chun Chiang, National Taiwan Univ. (Taiwan)
Yuh-Renn Wu, National Taiwan Univ. (Taiwan)
Yean-Woei Kiang, National Taiwan Univ. (Taiwan)
Chih-Chung Yang, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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