Share Email Print

Proceedings Paper

Distributed feedback InGaN/GaN laser diodes
Author(s): Thomas J. Slight; Scott Watson; Amit Yadav; Szymon Grzanka; Szymon Stanczyk; Kevin E. Docherty; Edik Rafailov; Piotr Perlin; Steve Najda; Mike Leszczyński; Anthony E. Kelly
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

Paper Details

Date Published: 23 February 2018
PDF: 6 pages
Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053219 (23 February 2018); doi: 10.1117/12.2285632
Show Author Affiliations
Thomas J. Slight, Compound Semiconductor Technologies Global Ltd. (United Kingdom)
Scott Watson, Univ. of Glasgow (United Kingdom)
Amit Yadav, Aston Univ. (United Kingdom)
Szymon Grzanka, TopGaN Ltd. (Poland)
Szymon Stanczyk, TopGaN Ltd. (Poland)
Kevin E. Docherty, Kelvin Nanotechnology Ltd. (United Kingdom)
Edik Rafailov, Aston Univ. (United Kingdom)
Piotr Perlin, TopGaN Ltd. (Poland)
Steve Najda, TopGaN Ltd. (Poland)
Mike Leszczyński, TopGaN Ltd. (Poland)
Anthony E. Kelly, Univ. of Glasgow (United Kingdom)

Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

© SPIE. Terms of Use
Back to Top