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Proceedings Paper

Improvement of responsivity of GaN-based p-i-n ultraviolet photodetector by inserting a delta doped layer in active region
Author(s): Jun Wang; Jin Guo; Guosheng Wang; Feng Xie; Li Jin
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Paper Abstract

GaN-based homojunction p-i-n ultraviolet (UV) photodetectors (PDs) with the conventional structure and delta doped layer in the p-n interface are investigated numerically. Using the delta doped n-type layer, the PDs exhibit much higher responsivity and almost does not affect the dark current as compared to conventional one. Simulation results show that the enhancement of the carrier injection from p-type region, which is the main reason behind the improved performance of GaN-based p-i-n PDs employing the delta doping. This beneficial effect is more remarkable in situations with higher p-cap absorption, such as devices with a thickness p-cap layer or devices with a higher Aluminium composition.

Paper Details

Date Published: 24 October 2017
PDF: 6 pages
Proc. SPIE 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications, 104624J (24 October 2017); doi: 10.1117/12.2285560
Show Author Affiliations
Jun Wang, The 38th Research Institute of China Electronics Technology Group Corp. (China)
Jin Guo, The 38th Research Institute of China Electronics Technology Group Corp. (China)
Guosheng Wang, The 38th Research Institute of China Electronics Technology Group Corp. (China)
Feng Xie, The 38th Research Institute of China Electronics Technology Group Corp. (China)
Li Jin, The 38th Research Institute of China Electronics Technology Group Corp. (China)


Published in SPIE Proceedings Vol. 10462:
AOPC 2017: Optical Sensing and Imaging Technology and Applications
Yadong Jiang; Haimei Gong; Weibiao Chen; Jin Li, Editor(s)

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