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Imaging performance comparison of novel CMOS low-light-level image sensor and electron multiplying CCD sensor
Author(s): Song Yang; Xuxia Zhuang; Fang Xue; Qian Sun; Ningjuan Ruan
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Paper Abstract

Due to its advantages on the cost, power and size, the study of the CMOS image sensor is considered as an important direction of the development of low-light-level image sensor. However, the sensitivity of current CMOS image sensor does not satisfy the low-light-level application requirements. This paper introduces several key techniques on how to improve the sensitivity of CMOS image sensors. We introduce a novel CMOS low-light-level image sensor based on Geiger mode avalanche photodiode (GM-APD) and digital TDI technology. Noise characteristics and complete signal-tonoise ratio(SNR) theoretical models are constructed for both sensors. A comparison of SNR performance of two image sensors is also done by numerical simulation in this paper. The results show that the novel CMOS low-light-level image sensor outperforms EMCCD at the very low light level.

Paper Details

Date Published: 24 October 2017
PDF: 6 pages
Proc. SPIE 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications, 104623X (24 October 2017); doi: 10.1117/12.2285297
Show Author Affiliations
Song Yang, Beijing Institute of Space Mechanics & Electricity (China)
Xuxia Zhuang, Beijing Institute of Space Mechanics and Electricity (China)
Fang Xue, Beijing Institute of Space Mechanics and Electricity (China)
Qian Sun, Beijing Institute of Space Mechanics and Electricity (China)
Ningjuan Ruan, Beijing Institute of Space Mechanics and Electricity (China)


Published in SPIE Proceedings Vol. 10462:
AOPC 2017: Optical Sensing and Imaging Technology and Applications
Yadong Jiang; Haimei Gong; Weibiao Chen; Jin Li, Editor(s)

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