Share Email Print

Proceedings Paper

Modeling and optimization of InGaAs photodetectors
Author(s): Yi Jiang; Zhengyu Zhang; Jun Chen
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The modeling and optimization of several photodetectors by semiconductor simulation tool Silvaco Atlas are reported. First is the simulations of p-i-n InP/In0.53Ga0.47As/InP photodetector at low bias. How the dark current, photoresponse and the transient response are influenced by the doping concentration and thickness of the absorption layer are reported. Second is a two-terminal p-n-p heterojunction phototransistors (2T-HPTs) based on In0.53Ga0.47As/InP. To optimize the device performance, the adjustment of the doping level, width, and compositional grading of base, the effects of high-low doping in collector region and the insertion of a thin undoped InGaAs layer in the base region have been investigated. The last is a simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodetectors (SAGCM APDs), study the effect of multiplication layer parameters on the operating voltage ranges of APD.

Paper Details

Date Published: 24 October 2017
PDF: 7 pages
Proc. SPIE 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications, 104623G (24 October 2017); doi: 10.1117/12.2285162
Show Author Affiliations
Yi Jiang, Soochow Univ. (China)
Zhengyu Zhang, Soochow Univ. (China)
Jun Chen, Soochow Univ. (China)

Published in SPIE Proceedings Vol. 10462:
AOPC 2017: Optical Sensing and Imaging Technology and Applications
Yadong Jiang; Haimei Gong; Weibiao Chen; Jin Li, Editor(s)

© SPIE. Terms of Use
Back to Top