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GaN ultraviolet p–i–n photodetectors with enhanced deep ultraviolet quantum efficiency
Author(s): Guosheng Wang; Feng Xie; Jun Wang; Jin Guo
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Paper Abstract

GaN ultraviolet (UV) p–i–n photodetectors (PDs) with a thin p-AlGaN/GaN contact layer are designed and fabricated. The PD exhibits a low dark current density of∼7 nA/cm2 under −5 V, and a zero-bias peak responsivity of ∼0.16 A/W at 360 nm, which corresponds to a maximum quantum efficiency of 55%. It is found that, in the wavelength range between 250 and 365 nm, the PD with thin p-AlGaN/GaN contact layer exhibits enhanced quantum efficiency especially in a deep-UV wavelength range, than that of the control PD with conventional thin p-GaN contact layer. The improved quantum efficiency of the PD with thin p-AlGaN/GaN contact layer in the deep-UV wavelength range is mainly attributed to minority carrier reflecting properties of thin p-AlGaN/GaN heterojunction which could reduce the surface recombination loss of photon-generated carriers and improve light current collection efficiency.

Paper Details

Date Published: 24 October 2017
PDF: 6 pages
Proc. SPIE 10460, AOPC 2017: Optoelectronics and Micro/Nano-optics, 104601C (24 October 2017); doi: 10.1117/12.2285016
Show Author Affiliations
Guosheng Wang, China Electronics Technology Group Corp. (China)
Feng Xie, China Electronics Technology Group Corp. (China)
Jun Wang, China Electronics Technology Group Corp. (China)
Jin Guo, China Electronics Technology Group Corp. (China)


Published in SPIE Proceedings Vol. 10460:
AOPC 2017: Optoelectronics and Micro/Nano-optics
Min Qiu; Min Gu; Xiaocong Yuan; Zhiping Zhou, Editor(s)

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