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Proceedings Paper

Studies on the trapped-mode resonant properties in asymmetric terahertz metamaterial
Author(s): Wei Chen; Qingli Zhou; Chenyu Li; Lan Shi; Changxiang Liu; Cunlin Zhang
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Paper Abstract

Artificial metamaterials with appropriate design can exhibit unique electromagnetic phenomena which do not exist in natural materials. Some studies have shown that the method of breaking the geometric symmetry is capable to modify the electromagnetic responses. Here, we simulated and measured the transmission spectra of period arrays of subwavelength double-bar structure. The obtained results show the trapped-mode resonance with Fano-shaped spectrum can be induced in terahertz metamaterial with asymmetric double-bar structure, accompanied with a metamaterial induced transparency window between two resonant dips. And the bar spacing and lattice constant have great impact on the coupling strength concerned with the transparency position and spectral lineshape. We attribute there are two mechanisms together determine the coupling pattern between the bar array and the terahetz wave, the coupling between the bars of the same unit cell and the coupling between the bars of the neighbouring cells. Our obtained results indicate that such metamaterial with very simple configuration could also provide the potential application in the field of terahertz slow-light devices, amplitude and phase modulators.

Paper Details

Date Published: 24 October 2017
PDF: 5 pages
Proc. SPIE 10459, AOPC 2017: Optical Storage and Display Technology, 104590D (24 October 2017); doi: 10.1117/12.2284323
Show Author Affiliations
Wei Chen, Beijing Institute of Technology (China)
National Space Science Ctr. (China)
Qingli Zhou, Capital Normal Univ. (China)
Chenyu Li, Capital Normal Univ. (China)
Lan Shi, Capital Normal Univ. (China)
Changxiang Liu, Capital Normal Univ. (China)
Cunlin Zhang, Capital Normal Univ. (China)

Published in SPIE Proceedings Vol. 10459:
AOPC 2017: Optical Storage and Display Technology
Byoungho Lee; Yongtian Wang; Xiaodi Tan; Xiangping Li, Editor(s)

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