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Structural and optoelectronic properties of ZnGaO thin film by pulsed laser deposition
Author(s): Xiaowei Han; Li Wang; Shufeng Li; Dongwen Gao; Yong Pan
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Paper Abstract

ZnO has attracted much attention because of its high-energy gap and exciton binding energy at room temperature. Compared to ZnO thin films, ZnGaO thin films are more resistive to oxidation and have smaller deformation of lattice. In this study, the high purity ZnSe and Ga2O3 powders were weighted at a molar ratio of 18:1. Se was oxidized to Se2O3 and separated from the mixture powders by using conventional solid state reaction method in air, and the ZnGaO ceramic target was prepared. We fabricated the ZnGaO films on silica glass by pulsed laser deposition (PLD) method under different oxygen pressure at room temperature. The as-grown films were tested by X-ray diffraction and atomic force microscope (AFM) to diagnose the crystal structure and surface morphology. Moreover, we obtained the optical transmittance of ZnGaO film and found that the electrical conductivity capacity varied with the increase of oxygen pressure.

Paper Details

Date Published: 12 January 2018
PDF: 7 pages
Proc. SPIE 10622, 2017 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices, 1062207 (12 January 2018); doi: 10.1117/12.2284289
Show Author Affiliations
Xiaowei Han, Beijing Univ. of Technology (China)
Li Wang, Beijing Univ. of Technology (China)
Shufeng Li, Beijing Univ. of Technology (China)
Dongwen Gao, Beijing Univ. of Technology (China)
Yong Pan, Beijing Univ. of Technology (China)


Published in SPIE Proceedings Vol. 10622:
2017 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices
Baojun Li; Xingjun Wang; Ya Sha Yi; Liquan Dong, Editor(s)

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