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Proceedings Paper

Plasmonic near-field focusing with nanotips structure
Author(s): Yong Wu; Dong Wei; Dapeng Li; Zhaowei Xin; Xinyu Zhang; Haiwei Wang; Changsheng Xie
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Paper Abstract

In this paper, a new kind of symmetrical aluminum (Al) nanotips structure based on localized rather traditional propagating surface plasmon polarizations (SPPs) focusing are designed and fabricated successfully. The simulation results about near-field distribution of electric field and reflectance calculations using finite-difference time-domain (FDTD) simulation theory are exhibited and then the device is fabricated mainly by coating Al films with the thickness of 100 nm on n-type doping silicon (Si), cutting into scale of 15mm×15mm by wafer dicing, electron beam lithography (EBL) exposure and ICP etching. The near-field focusing properties about small spot breaking the diffracting limitation with one order enhancement in the near-tip area of this structure are demonstrated experimentally using scanning nearfield optical microscopy (SNOM), and the comparisons to simulation results are analyzed, so as to reveal a potential application in capturing near-field focusing images quickly by applying exterior voltage signals based on our structure with nanotips.

Paper Details

Date Published: 19 February 2018
PDF: 5 pages
Proc. SPIE 10607, MIPPR 2017: Multispectral Image Acquisition, Processing, and Analysis, 1060703 (19 February 2018); doi: 10.1117/12.2284099
Show Author Affiliations
Yong Wu, Huazhong Univ. of Science and Technology (China)
Dong Wei, Huazhong Univ. of Science and Technology (China)
Dapeng Li, Shanghai Aerospace Control Technology Institute (China)
Zhaowei Xin, Huazhong Univ. of Science and Technology (China)
Xinyu Zhang, Huazhong Univ. of Science and Technology (China)
Haiwei Wang, Huazhong Univ. of Science and Technology (China)
Changsheng Xie, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10607:
MIPPR 2017: Multispectral Image Acquisition, Processing, and Analysis
Xinyu Zhang; Jun Zhang; Hongshi Sang, Editor(s)

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