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Proceedings Paper

Processing issues and modeling
Author(s): A. R. Neureuther
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Paper Abstract

A brief perspective is given initially on the goals, exposure methods, performance and challenges in the lithography process. The basic framework for simulating optical lithog- raphy is then presented using three important physical aspects: imaging, resist exposure- bleaching and resist development etching. Image quality in both contact/proximity and projection printing are considered. The verification by comparison of simulated resist pro- files with SEM cross sections from resist images on wafers in then considered. The chap- ter concludes with a discussion of the challenges facing projection printing and the technology directions emerging to meet them. Greater detail on many of the concepts and models introduced in this Chapter can be found in subsequent chapters.

Paper Details

Date Published: 30 August 2017
PDF: 76 pages
Proc. SPIE 10320, An Introduction to Biological and Artificial Neural Networks for Pattern Recognition, 1032004 (30 August 2017); doi: 10.1117/12.2284077
Show Author Affiliations
A. R. Neureuther, Univ. of California, Berkeley (United States)


Published in SPIE Proceedings Vol. 10320:
An Introduction to Biological and Artificial Neural Networks for Pattern Recognition
Steven K. Rogers; Matthew Kabrisky, Editor(s)

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