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Precise characterization of optical thin films and compound semiconductor stacks using spectroscopic ellipsometry
Author(s): Jean-Claude Fouere
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Paper Abstract

Spectroscopic ellipsometry is a technique that is powerful for characterizing thin films and materials. The technique is now routinely used in R&D laboratories for characterizing a very wide diversity of thin films and materials, and within manufacturing facilities for monitoring deposition processes. Spectroscopic ellipsometry relies on the determination of the polarization state of an incident beam upon reflection on the sample under characterization. When performing spectroscopic ellipsometry, the polarization state is determined at many discrete wavelengths over a broad spectral range. The change in the polarization state can be traced to the physical properties of the thin film by means of a model and through regression analysis. Physical characteristics such as layer thickness, surface roughness, index of refraction and coefficient of absorption of the materials can be determined with excellent precision. The principle of the technique is outlined in Fig. 1.

Paper Details

Date Published: 29 August 2017
PDF: 3 pages
Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 1031350 (29 August 2017); doi: 10.1117/12.2283976
Show Author Affiliations
Jean-Claude Fouere, SOPRA Inc. (United States)


Published in SPIE Proceedings Vol. 10313:
Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging
John C. Armitage, Editor(s)

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