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Analysis and control of optical film growth by in situ real-time spectroscopic ellipsometry
Author(s): Aram Amassian
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Paper Abstract

The understanding of the nucleation stage of thin film growth is a key element of the optimization of synthesis parameters in order to obtain high-quality optical coatings with predetermined characteristics. The fabrication of advanced coatings, often consisting of complex non-quarter wave and/or metal dielectric stacks, requires new and more powerful in situ monitoring techniques compared to conventional reflectometry and transmission, or quartz crystal microbalance measurements. We describe the use of in situ real-time spectroscopic ellipsometry (RTSE) for the development of optical materials and for the control of the fabrication of homogeneous and inhomogeneous optical filters. Examples include materials such as Ti02, Si02 and SiNx prepared by plasma-enhanced chemical vapor deposition (PECVD).

Paper Details

Date Published: 29 August 2017
PDF: 3 pages
Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103134U (29 August 2017); doi: 10.1117/12.2283970
Show Author Affiliations
Aram Amassian, Ecole Polytechnique de Montreal (Canada)


Published in SPIE Proceedings Vol. 10313:
Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging
John C. Armitage, Editor(s)

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