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Patterning of photoluminescent nanostructured spots on silicon by air optical breakdown processing
Author(s): A. V. Kabashin
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Paper Abstract

Nanostructured silicon can exhibit visible photoluminescence (PL) with quantum efficiency of up to few percent, although bulk silicon has a small (1.11 eV) and indirect band gap. This luminescent property gives a promise fo the creation of Si-based optoelectronics devices and their potential integration in standard Si-based microelectronics chips. The search of methods for the production of visible light-emission from Si-based materials becomes currently a great task and a subject of numerous studies, while "dry" fabrication techniques are of particular interest due to a much better compatibility with silicon processing technology.

Paper Details

Date Published: 29 August 2017
PDF: 3 pages
Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 1031327 (29 August 2017); doi: 10.1117/12.2283875
Show Author Affiliations
A. V. Kabashin, Ecole Polytechnique de Montreal (Canada)


Published in SPIE Proceedings Vol. 10313:
Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging
John C. Armitage, Editor(s)

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