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Proceedings Paper

Laser tunning silicon microdevices for analog microelectronics
Author(s): M. Meunier
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Paper Abstract

A novel laser tunning technique, fully compatible with conventional CMOS processes, is described for analog and mixed microelectronics applications. In this method, a laser beam is used to create a resistive device by melting a silicon area, thereby forming an electrical link between two adjacent p-n junction diodes. These laser diffusible resistances can be made in the range of 100S2 to a few MS2, with an accuracy of 5Oppm, by using an iterative process.

Paper Details

Date Published: 29 August 2017
PDF: 3 pages
Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 1031324 (29 August 2017); doi: 10.1117/12.2283872
Show Author Affiliations
M. Meunier, Ecole Polytechnique de Montreal (Canada)
LTRIM-Technologies (Canada)


Published in SPIE Proceedings Vol. 10313:
Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging
John C. Armitage, Editor(s)

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