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Proceedings Paper

Novel three dimensional masking techniques for integrated photonic devices fabrication using low energy ion implantation induced quantum well intermixing
Author(s): Vincent Aimez
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Paper Abstract

Low energy ion implantation induced quantum well intermixing is an attractive way to obtain bandgap tuning across laser heterostructures. This technique is well suited for InP based heterostructures where the amount of blueshift obtained is closely linked to the amount of point defects created through ion implantation. We have developed novel masking techniques for the fabrication of multiple bandgap heterostructures using a single ion implantation step through variable thickness masks. Two main approaches have been studied for ion implantation masking in order to address both high precision and large flexibility of the mask thickness.

Paper Details

Date Published: 29 August 2017
PDF: 3 pages
Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103131Z (29 August 2017); doi: 10.1117/12.2283867
Show Author Affiliations
Vincent Aimez, Univ. de Sherbrooke (Canada)


Published in SPIE Proceedings Vol. 10313:
Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging
John C. Armitage, Editor(s)

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