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Proceedings Paper

Erbium-doped SiOxNy films produced by ECR-PECVD
Author(s): Edward A. Irving
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Paper Abstract

In this paper, we report on the fabrication of Erbium doped waveguide amplifiers (EDWA's) using electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). The salient process parameters are presented, as are the determination of the Er content through Rutherford Backscattering (RBS), and measurements of the film composition using elastic recoil detection (ERD), nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS).

Paper Details

Date Published: 29 August 2017
PDF: 2 pages
Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103131E (29 August 2017); doi: 10.1117/12.2283846
Show Author Affiliations
Edward A. Irving, McMaster Univ. (Canada)


Published in SPIE Proceedings Vol. 10313:
Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging
John C. Armitage, Editor(s)

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