Share Email Print
cover

Proceedings Paper

Formation and characterization of porous SiC by anodic oxidation using potassium persulfate solution
Author(s): Y. Iwasa; S. Kamiyama; M. Iwaya; T. Takeuchi; I. Akasaki
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The formation process of porous SiC by anodic oxidation was investigated, aiming at the generation of pure white light with a high color rendering index (CRI) and high luminous efficiency. The efficiency of white light emission from porous SiC and its wavelength are strongly dependent on the porous structure such as the average pore size and porosity. In this study, we examined the structure and optical properties of porous SiC by adding potassium persulfate (K2S2O8) as an oxidant in HF solution to control the porosity of porous SiC formed by anodic oxidation. By increasing the amount of the oxidant, we enhanced the integrated light emission intensity of porous SiC to 81 times that of bulk SiC. Through the study of porous SiC we demonstrated that the peak wavelength of the porous SiC could be controlled from 370 to 500 nm. Porous SiC created by anodic oxidation was thus proven to have great potential for realizing high-CRI white light generation using LEDs.

Paper Details

Date Published: 2 January 2018
PDF: 6 pages
Proc. SPIE 10456, Nanophotonics Australasia 2017, 1045668 (2 January 2018); doi: 10.1117/12.2283026
Show Author Affiliations
Y. Iwasa, Meijo Univ. (Japan)
S. Kamiyama, Meijo Univ. (Japan)
M. Iwaya, Meijo Univ. (Japan)
T. Takeuchi, Meijo Univ. (Japan)
I. Akasaki, Meijo Univ. (Japan)
Nagoya Univ. (Japan)


Published in SPIE Proceedings Vol. 10456:
Nanophotonics Australasia 2017
James W. M. Chon; Baohua Jia, Editor(s)

© SPIE. Terms of Use
Back to Top