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Proceedings Paper

Mobility spectrum analysis of HgCdTe epitaxial layers grown by metalorganic chemical vapour deposition
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Paper Abstract

The preliminary results of quantitative mobility spectrum analysis of highly iodine-doped Hg0,685Cd0,315Te and arsenicdoped Hg0,827Cd0,173Te for the 5 – 300 K temperature range have been presented. Electron mobilities for the samples made by metalorganic chemical vapor deposition technique have been compared with the available literature data.

Paper Details

Date Published: 1 September 2017
PDF: 7 pages
Proc. SPIE 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 104550T (1 September 2017); doi: 10.1117/12.2282836
Show Author Affiliations
Jarosław Wróbel, Military Univ. of Technology (Poland)
Kinga Gorczyca, Military Univ. of Technology (Poland)
Gilberto A. Umana-Membreno, The Univ. of Western Australia (Australia)
Artur Kębłowski, VIGO System S.A. (Poland)
Jacek Boguski, Military Univ. of Technology (Poland)
Piotr Martyniuk, Military Univ. of Technology (Poland)
Paweł Madejczyk, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10455:
12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods
Przemyslaw Struk; Tadeusz Pustelny, Editor(s)

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