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Proceedings Paper

Transient microwave bandwidth measurements of illuminated silicon switches for optical pulse-shape control of laser-fusion drivers
Author(s): Kenton Green; William R. Donaldson; Roman Sobolewski; Andrey V. Okishev; Mark D. Skeldon; Samuel A. Letzring; Wolf D. Seka
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Paper Abstract

The microwave transmission properties of a high-purity (greater than or equal to 40 k(Omega) (DOT)cm) single-crystal-silicon, photoconductive (PC) switch were measured while the switch was optically activated. The switch was 2.3 mm wide (the width of the microstrip electrode), 2 mm long, and 0.5 mm thick with a 0.5-mm photoconductive gap and was mounted in a 50-(Omega) microstrip transmission line. The switch was irradiated uniformly with a 150-ns FWHM pulse from a Nd:YAG laser (wavelength equals 1.064 micrometer). The insertion loss of the optically activated PC switch was nearly constant minus 0.7 dB across the measurement system bandwidth (9 GHz). Under these illumination conditions, the switch exhibited negligible bandwidth limitations. The microstrip structure by itself had an insertion loss that increased from minus 0.4 dB at 1 GHz to minus 1.4 dB at 9 GHz.

Paper Details

Date Published: 8 December 1995
PDF: 7 pages
Proc. SPIE 2633, Solid State Lasers for Application to Inertial Confinement Fusion (ICF), (8 December 1995); doi: 10.1117/12.228269
Show Author Affiliations
Kenton Green, Univ. of Rochester (United States)
William R. Donaldson, Univ. of Rochester (United States)
Roman Sobolewski, Univ. of Rochester (United States)
Andrey V. Okishev, Univ. of Rochester (United States)
Mark D. Skeldon, Univ. of Rochester (United States)
Samuel A. Letzring, Univ. of Rochester (United States)
Wolf D. Seka, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 2633:
Solid State Lasers for Application to Inertial Confinement Fusion (ICF)
Michel Andre; Howard T. Powell, Editor(s)

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